| PART |
Description |
Maker |
| AT28BV64 AT28BV64-30SI AT28BV64-30PC AT28BV64-30PI |
64K 8K x 8 Battery-Voltage CMOS E2PROM
64K (8K x 8) Battery-Voltage CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| AT27BV1024-12JC AT27BV1024-90VI AT27BV1024 AT27BV1 |
1 Megabit 64K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM 64K X 16 OTPROM, 90 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| AT28BV64-30PC AT28BV64-30JC AT28BV64-30JI |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PDIP28
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PQCC32
|
Atmel, Corp.
|
| AT27BV512-15TI AT27BV512-15JI AT27BV512-90RC AT27B |
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel
|
| AT28BV64B09 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28
64K 8K x 8 CMOS E2PROM
8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85
64K EEPROM with 64-Byte Page & Software Data Protection
64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
From old datasheet system
64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| LA5619M |
Lead Battery Charger IC with Battery Voltage Detection Function
|
SANYO[Sanyo Semicon Device]
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
